Updated 01 Apr 2021
This code solves the Poison equation in 1D on inhomogeneous grid in semiconductors heterostructures. As a results, it gives the band bending profile for any heterostructures. It is specially useful for CMOS, diode and whatever npn & pnp junction. A strain model is included. It basically shifts the conduction and valence band edge The code does NOT take into account the non-parabolicity of the bands. The electron and the hole masses are loaded from the "material.csv" file for each material. Additional material can be added in the "materialDB_ZB.csv" file
Laurent NEVOU (2021). Q_Poisson1D (https://github.com/LaurentNevou/Q_Poisson1D), GitHub. Retrieved .
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