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SPICE-Imported MOSFET

Predefined MOSFET parameterized by external SPICE subcircuit

Since R2020b

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Libraries:
Simscape / Electrical / Semiconductors & Converters

Description

The SPICE-Imported MOSFET block models a metal-oxide-semiconductor field-effect transistor (MOSFET) that has been parameterized using an external SPICE subcircuit.

You can use this block to model the MOSFET devices listed in the table. These parameterizations have already been imported to Simscape using the subcircuit2ssc function, and they have been numerically validated against results generated using a SPICE simulation tool.

Available Parameterizations

SeriesDevice
Infineon OptiMOS6 40VIAUC120N04S6N009
IAUC120N04S6N010
IAUC120N04S6N013
IAUC100N04S6N015
IAUC100N04S6N022
IAUC100N04S6N028
IAUC80N04S6N036
IAUC60N04S6N036
IAUC120N04S6L008
IAUC120N04S6L009
IAUC120N04S6L012
IAUC100N04S6L014
IAUC100N04S6L020
IAUC100N04S6L025
IAUC80N04S6L032
IAUC60N04S6L039
Infineon OptiMOS5 80VIPB015N08N5
IPB017N08N5
IPP020N08N5
IPT012N08N5
IPB020N08N5
IPP023N08N5
IPB024N08N5
IPP027N08N5
IPB031N08N5
IPP034N08N5
IPB049N08N5
IPP052N08N5
IAUT300N08S5N012
IAUT165N08S5N029
IAUT300N08S5N014
IAUT240N08S5N019
IAUT200N08S5N023
IAUS300N08S5N013T
IAUS300N08S5N015T
IAUC100N08S5N031
IAUC100N08S5N043
IAUC70N08S5N074
Infineon OptiMOS4 60VIPB180N06S4_H1
IPB120N06S4_H1
IPI120N06S4_H1
IPP120N06S4_H1
IPB120N06S4_02
IPI120N06S4_02
IPP120N06S4_02
IPB120N06S4_03
IPI120N06S4_03
IPP120N06S4_03
IPB90N06S4_04
IPD90N06S4_04
IPD100N06S4_03
IPI90N06S4_04
IPP90N06S4_04
IPB80N06S4_05
IPD90N06S4_05
IPI80N06S4_05
IPP80N06S4_05
IPB80N06S4_07
IPD90N06S4_07
IPI80N06S4_07
IPP80N06S4_07
IPB45N06S4_09
IPD50N06S4_09
IPI45N06S4_09
IPP45N06S4_09
IPG20N06S4_15
IPB90N06S4L_04
IPD90N06S4L_03
IPI90N06S4L_04
IPP90N06S4L_04
IPB80N06S4L_05
IPD90N06S4L_05
IPI80N06S4L_05
IPP80N06S4L_05
IPB80N06S4L_07
IPD90N06S4L_06
IPI80N06S4L_07
IPP80N06S4L_07
IPB45N06S4L_08
IPD50N06S4L_08
IPI45N06S4L_08
IPP45N06S4L_08
IPD50N06S4L_12
IPD30N06S4L_23
IPD25N06S4L_30
IPG20N06S4L_11
IPG20N06S4L_14
IPG20N06S4L_26
Infineon OptiMOST 120VIPB100N12S3_05
IPI100N12S3_05
IPP100N12S3_05
IPB70N12S3_11
IPI70N12S3_11
IPP70N12S3_11
IPD70N12S3_11
IPD70N12S3L_12
IPB70N12S3L_12
IPI70N12S3L_12
IPP70N12S3L_12
IPB50N12S3L_15
IPD50N12S3L_15
IPI50N12S3L_15
IPP50N12S3L_15
IPB35N12S3L_26
IPD35N12S3L_24
IPD30N12S3L_31

Limitations

  • This block works with local solver and variable-step solver. To enable the local solver, select the Use local solver check box in the Solver Configuration block. You must set the Sample time parameter to a value smaller than the fastest device dynamic. If you specify a larger sample time, the block steps over the dynamic events, which results in numerical warnings.

  • Copying this block from the library into a model breaks the link to the library. If you upgrade MATLAB to later versions, you need to replace this block with a new copy of the block from the library.

Ports

Conserving

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Electrical conserving port associated with the gate terminal of the chosen pre-parameterized MOSFET.

Electrical conserving port associated with the drain terminal of the chosen pre-parameterized MOSFET.

Electrical conserving port associated with the junction temperature of the chosen pre-parameterized MOSFET.

The voltage measured at this port corresponds to the temperature of the junction. For example, if the value at this port is equal to 25V, then the junction temperature is equal to 25 degrees Celsius.

Tj is usually a monitoring node and it is not connected.

Electrical conserving port associated with the case temperature of the chosen pre-parameterized MOSFET.

The voltage measured at this port corresponds to the temperature of the case. For example, if the value at this port is equal to 25V, then the case temperature is equal to 25 degrees Celsius.

Tc is connected either to a voltage source that represents the ambient temperature or to a heat-sink thermal network represented by electrical resistors and capacitors.

Electrical conserving port associated with the source of the chosen pre-parameterized MOSFET.

Parameters

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Series of the pre-parameterized MOSFET, specified as either Infineon OptiMOS6 40V, Infineon OptiMOS5 80V, Infineon OptiMOS4 60V, or Infineon OptiMOST 120V.

Name of the device, specified as one of the options listed in the Available Parameterizations table.

Version History

Introduced in R2020b

See Also

Functions

Topics