generateSemiconductorSwitchROM
Syntax
Description
The generateSemiconductorSwitchROM function converts a
high-fidelity semiconductor switch subsystem into a MOSFET
(Ideal, Switching) or IGBT (Ideal,
Switching) block, which represents a reduced-order model (ROM). The function
parameterizes the ROM with the on-state tabulated I-V curve and tabulated switching losses for
the transistor, and the on-state tabulated I-V curve and tabulated reverse recovery loss for
the associated body or external diode.
The semiconductor switch in the high-fidelity subsystem can be an N-Channel
MOSFET block, an N-Channel
IGBT block, a SPICE-Imported
MOSFET block, or a black-box semiconductor model. The subsystem must include
a body diode or an external diode associated with the semiconductor switch. The
generateSemicondutorSwitchROM function uses a double-pulse test circuit
to extract the switching losses. The test harness is a single-quadrant chopper that supplies
an inductive load. The function requires a diode for the IGBT or MOSFET devices as a
free-wheeling diode because, in many applications such as three-phase AC motor drives,
bi-directional DC motor drives, and full-bridge DC-DC converters, the power electronics
converter comprises one or more IGBT-based half-bridges.
ROMs are easier to interpret and run faster than high-fidelity semiconductor switch subsystems. You can run faster simulations by replacing the original semiconductor switch subsystem with the generated ROM subsystem. Use ROMs to quickly test and analyze system-level scenarios where the semiconductor switch interacts with other systems.
generateSemiconductorSwitchROM( generates
a reduced-order model from the high-fidelity semiconductor switch subsystem
sys)sys.
generateSemiconductorSwitchROM(
specifies options using one or more name-value arguments in addition to the input argument
in the previous syntax. For example,
sys,Name=Value)generateSemiconductorSwitchROM(sys,OnStateGateSourceVoltage=20)
generates a ROM with an on-state gate-source voltage equal to 20 V.
Some of the name-value arguments are the test-circuit conditions. You can set these values based on your detailed circuit conditions or a datasheet. These values are optional but accurate test circuit conditions provide you with more accurate ROMs
ROMParameters = generateSemiconductorSwitchROM(sys,Name=Value)
Examples
This example shows how to generate the reduced order model (ROM) of an N-Channel MOSFET subsystem.
Open Model
Open the GenerateROMOfThresholdBasedMOSFETModel.slx model.
open_system("GenerateROMOfThresholdBasedMOSFET");Warning: Unrecognized function or variable 'CloneDetectionUI.internal.CloneDetectionPerspective.register'.
The Gate Driver block that drives the MOSFET device has an on-state gate-source voltage of 10 V, an on-state gate drive resistance of 2 Ohm, and an off-state gate drive resistance of 2 Ohm. The ThresholdBasedMOSFET subsystem contains an N-Channel MOSFET block.
The subsystem must have the correct port names and port types. The ports of the subsystem must match the ports of the N-Channel MOSFET block: G, D, and S.
To include the temperature dependence in your ROM model, specify the device simulation temperature by using the Tdevice workspace variable. The generateSemiconductorSwitchROM function sets the Device simulation temperature parameter of the generated ROM to the values you specify in the Temperatures name-value argument.
Generate ROM
Run the generateSemiconductorSwitchROM function to generate the ROM of the ThresholdBasedMOSFET subsystem and set these options:
Based on the gate driver specifications, set the on-state gate-source voltage to 10 V, the on-state gate drive resistance to 2 Ohm, and the off-state gate drive resistance to 2 Ohm.
Calculate the I-V curves and the losses at two different temperatures, 25°C and 75°C.
Specify the lookup table breakpoints for the I-V characteristics and losses.
ROMParameters = generateSemiconductorSwitchROM("GenerateROMOfThresholdBasedMOSFET/ThresholdBasedMOSFET", ... DeviceType="MOSFET", ... OnStateGateSourceVoltage=10, ... OnStateGateResistance=2, ... OffStateGateResistance=2, ... Temperatures=[25, 75], ... OnStateCurrentsForIV= 0:1:70, ... OnStateCurrentsForLoss=[10, 30, 50, 70], ... OffStateVoltagesForLoss=[80,100]);
Using: DeviceType = MOSFET OnStateGateSourceVoltage = 10 ConstantCurrentForThresholdVoltage = 0.1 OnStateGateResistance = 2 OffStateGateResistance = 2 Temperatures = [25;75] OnStateCurrentsForIV = [0;1;2;3;4;5;6;7;8;9;10;11;12;13;14;15;16;17;18;19;20;21;22;23;24;25;26;27;28;29;30;31;32;33;34;35;36;37;38;39;40;41;42;43;44;45;46;47;48;49;50;51;52;53;54;55;56;57;58;59;60;61;62;63;64;65;66;67;68;69;70] OnStateCurrentsForLoss = [10;30;50;70] OffStateVoltagesForLoss = [80;100] TestCircuitLeakageInductance = 0 TestCircuitStrayCapacitance = 0 Writing test harness models in the folder 'C:\Users\pvadala\AppData\Local\Temp\' Extracting switch IV curve ... Running simulation to extract the threshold voltage ... Threshold voltage extracted = 1.8554 Running simulation to estimate voltage for current = 70 [A] and temperature = 25 [degC] ... Estimated voltage = 1.8198 [V]. Running voltage sweep simulation between 0 and 2.3657 [V] at constant temperature = 25 [degC] ... Running voltage sweep simulation between 0 and 2.3657 [V] at constant temperature = 75 [degC] ... Running voltage sweep simulation between 0 and 2.2752 [V] at constant temperature = 25 [degC] ...
Extracting diode IV curve ... Running simulation to estimate voltage for current = -70 [A] and temperature = 25 [degC] ... Estimated voltage = -9.2608 [V]. Running voltage sweep simulation between 0 and -12.0391 [V] at constant temperature = 25 [degC] ... Running voltage sweep simulation between 0 and -12.0391 [V] at constant temperature = 75 [degC] ...
![Figure contains an axes object. The axes object with title Diode I-V Characteristics by Temperature, xlabel Diode forward voltage V indexOf f baseline [V], ylabel Diode forward current I indexOf f baseline [A] contains 2 objects of type line. These objects represent Tj = 25 degC, Tj = 75 degC.](../../examples/simscapeelectrical/win64/GenerateROMOfThresholdBasedMOSFETExample_03.png)
Extracting switching loss lookup tables ... Running simulation to extract switching losses at T = 25 [degC], Iload = 10 [A], and Vcc = 80 [V] ... Estimated Eon = 1.1529e-06 [J] and Eoff = 7.2961e-07 [J]. Running simulation to extract switching losses at T = 25 [degC], Iload = 10 [A], and Vcc = 100 [V] ... Estimated Eon = 1.7605e-06 [J] and Eoff = 1.2182e-06 [J]. Running simulation to extract switching losses at T = 25 [degC], Iload = 30 [A], and Vcc = 80 [V] ... Estimated Eon = 3.5706e-06 [J] and Eoff = 2.1567e-06 [J]. Running simulation to extract switching losses at T = 25 [degC], Iload = 30 [A], and Vcc = 100 [V] ... Estimated Eon = 5.4232e-06 [J] and Eoff = 3.4165e-06 [J]. Running simulation to extract switching losses at T = 25 [degC], Iload = 50 [A], and Vcc = 80 [V] ... Estimated Eon = 6.8778e-06 [J] and Eoff = 3.2283e-06 [J]. Running simulation to extract switching losses at T = 25 [degC], Iload = 50 [A], and Vcc = 100 [V] ... Estimated Eon = 1.0329e-05 [J] and Eoff = 5.5009e-06 [J]. Running simulation to extract switching losses at T = 25 [degC], Iload = 70 [A], and Vcc = 80 [V] ... Estimated Eon = 1.114e-05 [J] and Eoff = 4.4236e-06 [J]. Running simulation to extract switching losses at T = 25 [degC], Iload = 70 [A], and Vcc = 100 [V] ... Estimated Eon = 1.6739e-05 [J] and Eoff = 7.1336e-06 [J]. Running simulation to extract switching losses at T = 75 [degC], Iload = 10 [A], and Vcc = 80 [V] ... Estimated Eon = 1.2824e-06 [J] and Eoff = 6.7142e-07 [J]. Running simulation to extract switching losses at T = 75 [degC], Iload = 10 [A], and Vcc = 100 [V] ... Estimated Eon = 1.9688e-06 [J] and Eoff = 9.64e-07 [J]. Running simulation to extract switching losses at T = 75 [degC], Iload = 30 [A], and Vcc = 80 [V] ... Estimated Eon = 4.3151e-06 [J] and Eoff = 1.9814e-06 [J]. Running simulation to extract switching losses at T = 75 [degC], Iload = 30 [A], and Vcc = 100 [V] ... Estimated Eon = 6.552e-06 [J] and Eoff = 2.9285e-06 [J]. Running simulation to extract switching losses at T = 75 [degC], Iload = 50 [A], and Vcc = 80 [V] ... Estimated Eon = 8.7832e-06 [J] and Eoff = 2.9058e-06 [J]. Running simulation to extract switching losses at T = 75 [degC], Iload = 50 [A], and Vcc = 100 [V] ... Estimated Eon = 1.3133e-05 [J] and Eoff = 4.4577e-06 [J]. Running simulation to extract switching losses at T = 75 [degC], Iload = 70 [A], and Vcc = 80 [V] ... Estimated Eon = 1.5111e-05 [J] and Eoff = 3.8547e-06 [J]. Running simulation to extract switching losses at T = 75 [degC], Iload = 70 [A], and Vcc = 100 [V] ... Estimated Eon = 2.2885e-05 [J] and Eoff = 5.7483e-06 [J].
![Figure Eon contains 2 axes objects. Axes object 1 with title Turn-On Switching Loss (Eon) at Tj = 25 [degC], xlabel On-state current [A], ylabel Energy loss (Eon) [J] contains 2 objects of type line. These objects represent Off-state voltage = 84.2902 [V], Off-state voltage = 104.2902 [V]. Axes object 2 with title Turn-On Switching Loss (Eon) at Tj = 75 [degC], xlabel On-state current [A], ylabel Energy loss (Eon) [J] contains 2 objects of type line. These objects represent Off-state voltage = 84.2902 [V], Off-state voltage = 104.2902 [V].](../../examples/simscapeelectrical/win64/GenerateROMOfThresholdBasedMOSFETExample_04.png)
![Figure Eoff contains 2 axes objects. Axes object 1 with title Turn-Off Switching Loss (Eoff) at Tj = 25 [degC], xlabel On-state current [A], ylabel Energy loss (Eoff) [J] contains 2 objects of type line. These objects represent Off-state voltage = 84.2902 [V], Off-state voltage = 104.2902 [V]. Axes object 2 with title Turn-Off Switching Loss (Eoff) at Tj = 75 [degC], xlabel On-state current [A], ylabel Energy loss (Eoff) [J] contains 2 objects of type line. These objects represent Off-state voltage = 84.2902 [V], Off-state voltage = 104.2902 [V].](../../examples/simscapeelectrical/win64/GenerateROMOfThresholdBasedMOSFETExample_05.png)
![Figure Erec contains 2 axes objects. Axes object 1 with title Reverse Recovery Loss (Erec) at Tj = 25 [degC], xlabel Complementary switch initial current [A], ylabel Energy loss (Erec) [J] contains 2 objects of type line. These objects represent Off-state voltage = 80 [V], Off-state voltage = 100 [V]. Axes object 2 with title Reverse Recovery Loss (Erec) at Tj = 75 [degC], xlabel Complementary switch initial current [A], ylabel Energy loss (Erec) [J] contains 2 objects of type line. These objects represent Off-state voltage = 80 [V], Off-state voltage = 100 [V].](../../examples/simscapeelectrical/win64/GenerateROMOfThresholdBasedMOSFETExample_06.png)
Calibrating ROM parameters. Removing near-zero values in I-V curve... Calibrating ROM parameters. Removing near-zero values in I-V curve...
Warning: Unrecognized function or variable 'CloneDetectionUI.internal.CloneDetectionPerspective.register'.
ans = "untitled/MOSFETROM/MOSFET (Ideal, Switching)"
ROM generation complete.
Input Arguments
Name-Value Arguments
Output Arguments
Version History
Introduced in R2024b
